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Publications

Journals

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1. S. Majee, D. Barshilia, D. Banerjee, S. Kumar, P. Mishra and J. Akhtar, “Modification of electrical properties of silicon dioxide through intrinsic nano-patterns”, Materials Research Express, https://doi.org/10.1088/2053-1591/aac182.

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2.  D. Banerjee et al., “Elevated thermoelectric figure of merit of n-type amorphous Silicon by efficient electrical doping process”, Nano Energy, vol. 44, 89, 2017.

 

3. D. Banerjee et al., “Design of Si-based nanostructured thermoelectric metamaterial for improving the thermoelectric performance via lowered thermal conductivity”, under submission.

 

4. S. Majee, D. Banerjee, X. Liu, S. Zhang and Z. Zhang, “Efficient and thermally stable iodine doping of printed graphene nano-platelets”, under review in Carbon.

 

5. D. Banerjee, S. Sankaranarayanan, D. Khachariya, M. B. Nadar, S. Ganguly and D. Saha, “Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires”, Applied Physics Letters, vol. 109, 031111, 2016.

 

6.  P. Chaturvedi, S. Chouksey, D. Banerjee, S. Ganguly and D. Saha, “Carrier and photon dynamics in a topological insulator Bi2Te3/GaN type II staggered heterostructure”, Applied Physics Letters, vol. 107, 192105, 2015.

 

7. D. Banerjee, K. Takhar, S. Sankaranarayanan, P. Upadhyay, R. Ruia, S. Chouksey, D. Khachariya, S. Ganguly and D. Saha, “Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser”, Applied Physics Letters, vol.107, 101108, 2015.

 

8. P. Upadhyay, M. Meer, K. Takhar, D. Khachariya, Akhil Kumar S, D. Banerjee, S. Ganguly, A. Laha and D. Saha, “Improved Ohmic contact to GaN and AlGaN/GaN two-dimensional electron gas using trap assisted tunneling by B implantation”, Physica Status Solidi B, vol. 252, No. 5, 989, 2015. 

 

9. D. Banerjee, M. B. Nadar, P. Upadhyay, R. Ruia, D. Khachariya, N. Pande, K. Thakar, S. Ganguly and D. Saha, “High exciton binding energy in GaN based superluminescent light emitting diode on naturally survived sub - 10 nm lateral nanowires”, http://arxiv.org/abs/1503.02279.

 

10. R. Adari, D. Banerjee, S. Ganguly and D. Saha, “Fermi level depinning at metal/GaN interface by an insulating barrier”, Thin Solid Films, vol. 550, 564, 2014.

 

11. R. Adari, D. Banerjee, S. Ganguly and D. Saha, “Memory Elements Using Multiterminal Magnetoresistive Devices”, Applied Physics Express, vol. 6, 043002, 2013.

 

12. D. Banerjee, R. Adari, S. Sankaranarayan, A. Kumar, S. Ganguly, R. W. Aldhaheri, M. A. Hussain, A. S. Balamesh and D. Saha, “Electrical Spin Injection using GaCrN in a GaN based Spin Light Emitting Diode”, Applied Physics Letters, vol. 103, 242408, 2013.

 

13. P. Suggisetti, D. Banerjee, R. Adari, N. Pande, T. Patil, S. Ganguly and D. Saha, “Room Temperature Ferromagnetism in Thermally Diffused Cr in GaN”, AIP Advances, vol. 3, 032143, 2013.

 

14. D. Banerjee, R. Adari, T. Pramanik, S. Ganguly and D. Saha, “Effect of Device Geometry on Output Circular Polarization in a Spin-LED”, IEEE Transactions on Magnetics, vol. 48, No. 11, 2012.

 

15. D. Banerjee, R. Adari, T. Patil, M. Murthy, P. Suggisetti, S. Ganguly, and D. Saha, "Modulation bandwidth of a spin laser", Journal of Applied Physics, vol. 109, 07C317, 2011.

 

16. D. Banerjee, T. Roy and S. Kar, “A Computer-Aided Analytical Study on Characteristics of LHM Structures at Microwave Frequencies”, IETE Journal of Research, vol. 55, No. 3, 112, May-June 2009.

 

17. T. Roy, D. Banerjee and S. Kar, “Studies on Multiple Inclusion Magnetic Structures Useful for Millimeter-wave Left Handed Materials”, IETE Journal of Research, vol. 55, No. 2, 83, March-April 2009.

Conferences and Workshops

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  • “Thermoelectric performance improvement in engineered amorphous Silicon”, D. Banerjee, S. Pal and Z. Zhang, 19th International Workshop on Physics of Semiconductor Devices (IWPSD), New Delhi, India, Dec. 2017 (received best poster award).

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  • “Engineering amorphous Silicon for thermoelectric performance improvement”, D. Banerjee, S. Majee and Z. Zhang, submitted EMRS Spring Meeting, Strasbourg, France, 2017.

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  • ”InGaN/GaN lateral nanowire laser for low threshold current”, D. Banerjee, K. Takhar, S. Sankaranarayanan, S. Ganguly and D. Saha, accepted for Oral presentation in the 18th International Workshop on Physics of Semiconductor Devices 2015 (IWPSD 2015), at Indian Institute of Science, Bangalore, India.

 

  • “GaN based nanowire LEDs and lasers”, invited talk at the Low dimensional systems topical meeting under the Current Trends in Condensed Matter Physics conference held in the National Institute of Science Education and Research (NISER), Bhubaneshwar, India, 2015.

 

  • “Nanowire formation on InGaN-based quantum well LED heterostructure by wet chemical etching”, D. Banerjee, P. Upadhyay, M. B. Nadar, S. Ganguly and D. Saha, International Workshop on Nitride Semiconductors 2014, Wroclaw Poland.

 

  • “Effect of Device Geometry on Output Circular Polarization in a Spin-LED”, D. Banerjee, S. Ganguly and D. Saha, IEEE International Magnetics Conference 2012, Vancouver, Canada, May 2012.

 

  • “Effect of Drift on Spin Polarization in a Spin-LED”, D. Banerjee, T. Pramanik, R. Adari, T. Patil, P. Suggisetti, S. Ganguly, and D. Saha, 56th Conference of Magnetism and Magnetic Materials, Scottsdale, Arizona, USA, November 2011.

 

  • “Modulation bandwidth of a spin laser”, D. Banerjee, R. Adari, T. Patil, M. Murthy, P. Suggisetti, S. Ganguly, and D. Saha, 55th Conference of Magnetism and Magnetic Materials, Atlanta, USA, November 2010.

 

  • “Room-temperature Ferromagnetism in Homogeneous Cr-doped GaN”, P. Suggisetti, T. Patil, R. Adari, D. Banerjee, T. Pramanik, D. Saha and S. Ganguly, 56th Conference of Magnetism and Magnetic Materials, Scottsdale, Arizona, USA, November 2011.

 

  • “Temperature Dependent Characteristics of Fe/n-GaN Schottky Diodes”, R. Adari, B. Sarkar, T. Patil, D. Banerjee, P. Suggisetti, S. Ganguly and D. Saha, SSDM 2011, Nagoya, Japan, September 2011.

Awards and Patents

 

  • Best poster award at IWPSD 2017, New Delhi.

  • DST-INSPIRE Faculty Award, 2017-2022.

  • Patent Number: 202/MUM/2015 (filed), Title: Light emitting diode made of Indium-Gallium Nitride based lateral nanowires and method of manufacture.

  • Scholarship obtained under the IITB-Monash Research Academy during the PhD tenure (2010-2014).

  • IETE-SK Mitra Memorial Award for the best research oriented paper in September 2010.

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